金属诱导单一方向横向晶化薄膜晶体管以及栅控型轻掺杂漏极结构的研究

提出了一种低温金属单向诱导横向晶化的多晶硅薄膜晶体管(LT-MIUC poly-Si TFT) 的技术 . 使用该技术可在大面积廉价玻璃衬底上制备出高迁移率、低漏电电流、具有较好均匀性的 多晶硅器件. 在进一步的研究中，设计了一种新型的栅控轻掺杂漏区(GM-LDD)结构，有效地 解决了在较高源漏电压下的栅诱导漏电问题. 使得LT-MIUC poly-Si TFT 更适用于高质量的 有源矩阵显示器. 关键词： 金属单向诱导横向晶化 多晶硅薄膜晶体管 新型栅控轻掺杂漏区结构

Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure

In this paper the low-temperature metal-induced unilaterally crystallized (MIUC ) polycrystalline silicon thin-film transistors (TFTs) have been developed and c haracterized. These TFTs have higher field-effect mobility, lower off-state curr ent and better spatial uniformity. A new structure of gate-modulated lightly dop ed drain of TFT was proposed. It is very effective to lower gate-induced drain-l eakage current of the TFTs when a higher source drain voltage is applied to it. This type MIUC TFT is suitable to fabricate active matrices for liquid crystal and organic light-emitting diode flat-panel displays on large area glass substr ates.