半导体材料的华丽家族—氮化镓基材料简介

GaN基氮化物材料已成功地用于制备蓝，绿，紫外光发光器件，日光盲紫外探测器以及高温，大功率微波电子器件，由于该材料具有大的禁带宽度，高的压电和热电系数，它们还有很强的其他应用潜力，诸如做非挥发存储器以及利用压电和热效应的电子器件等，在20世纪80年代末和90年代初，在GaN基氮化物材料的生长工艺上的突破引发了90年代GaN基器件，特别是光电子和高温，大功率微波器件方面的迅猛发展，文章评述了GaN基氮化物的材料特性，生长技术和相关器件应用。

EXOTIC FAMILY OF SEMICONDUCTOR MATERIALS-BRIEF INTRODUCTION TO GaN BASED MATERIALS

GaN based nitrides have been successfully used in blue/green/violet light emitting devices,UV solar blind optoelectronic detectors and high temperature,high power microwave electronic devices.Due to their large bandgaps,high pyroelectronic and piezoelectronic efficiencies,they also have strong potential for applications in other devices such as nonvolatile memories and in pyroelectronic and piezoelectronic devices.The breakthroughs achieved at the time around the end of the 1980s in the growth technique of GaN based materials have led to significant progress in the 1990s of GaN based devices,in particular,optoelectronic devices and high temperature,high power microwave devices. A review is given here of the characteristics,growth techniques and various devices of GaN based nitride materials.