| GaN基量子阱的激子跃迁和光学性质 |
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| 引用本文： | 熊飞.GaN基量子阱的激子跃迁和光学性质[J].物理实验,2004,24(5):46-48. |
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| 作者姓名： | 熊飞 |
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| 作者单位： | 武汉大学,物理科学与技术学院,湖北,武汉,430072 |
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| 摘 要： | 采用光致发光谱、光致发光激发谱以及拉曼光谱对GaN基量子阱材料进行了实验观察和分析 .实验结果表明样品中量子点结构不均匀及InGaN层中In成分分布不均匀 ,且其光致发光谱的波峰是由自由激子辐射复合发光引起的 .同时由室温下InGaN/GaN量子阱的拉曼谱可得知InGaN/GaN多量子阱的结构特征
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| 关 键 词： | InGaN/GaN多量子阱 光致发光谱(PL) 光致发光激发谱(PLE) 拉曼光谱 |
| 文章编号： | 1005-4642(2004)05-0046-03 |
| 修稿时间： | 2003年9月29日 |
Excitonic transition and optical property of GaN-based quantum wells |
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| XIONG Fei.Excitonic transition and optical property of GaN-based quantum wells[J].Physics Experimentation,2004,24(5):46-48. |
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| Authors: | XIONG Fei |
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| Abstract: | GaN based quantum wells is studied by observing and analyzing photoluminescence spectrum, photoluminescence excited spectrum and Raman spectrum. The experimental results show that the structure of the quantum dots is not homogeneous and In is not well distributed in the InGaN layer, moreover, the peak in PL spectrum is produced by compound luminescence of free exciton. The Raman spectrum of InGaN/GaN quantum wells makes the multi quantum wells structure characteristics more clear. |
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| Keywords: | InGaN/GaN multiple quantum wells PL spectrum PLE spectrum Raman spectrum |
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