Role of Al or Eu on thermoluminescence of Al- and/or Eu-doped SiO2 crystals

Although SiO₂ crystals have been used in electroluminescence devices and thermoluminescence (TL) dosimeters, the emission mechanism of TL has not yet been clearly explained. Recently, as we could get amorphous and highly pure SiO₂ prepared by the sol-gel method, we have investigated the TL emission mechanism using Al³⁺- and/or Eu³⁺-doped SiO₂ crystalline samples prepared by the heat-treatment under much lower temperature that the melting point of SiO₂. The TL spectrum of the Eu³⁺-doped sample displayed several peaks, including two main peaks due to the electron transitions from ⁵D₂ to ⁷F₅ (ca. 570 nm) and from ⁵D₀ to ⁷F₂ (ca. 610 nm). As doping concentration increased, all the peak intensities reduced from maximum values except that due to the electron transition from ⁵D₀ to ⁷F₂. These observations are thought to result from a cross-relaxation process due to the lack of inversion symmetry at the Eu³⁺ site.