High luminance of new green emitting phosphor, Mg2SnO4:Mn

Mg₂SnO₄, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg₂SnO₄:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn²⁺ ion. Optimum Mn concentration of Mg₂SnO₄:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg₂SnO₄:Mn phosphors under the two excitation sources are higher than those of Zn₂SiO₄:Mn and ZnGa₂O₄:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.