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Characteristics of InAlGaAs/InAlAs Superlattice Avalanche Photodiodes for Ultra-low Optical Power Detection in the Near Infrared |
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| Authors: | Yasunori Saito Tomoyuki Maruyama Hideaki Yamaki Fumitoshi Kobayashi Takuya D Kawahara Akio Nomura Mitsuyoshi Tanaka |
| Institution: | (1) Shinshu University, Department of Information Engineering, 500, Wakasato, Nagano, Nagano 380-8553, Japan;(2) R & D Office 5, Hioki E. E. Corporation, 81, Koizumi, Ueda, Nagano 386-1192, Japan;(3) Present address: Toyokawa Administrative Center, Minolta Company, Ltd., 1-8, Kanayanishi-Machi, Toyokawa, Aichi 442-8558, Japan |
| Abstract: | Static characteristics of two different structured InAlGaAs/InAlAs superlattice avalanche photodiodes (SLAPDs) cooled by liquid nitrogen were evaluated at a wavelength of 1.5 μm. The dark current of the SLAPD having a thick superlattice layer of 0.504 μm was 5 × 10−13 A. This was successively reduced by four orders of magnitude compared to that of the thin layer SLAPD of 0.231 μm at a breakdown voltage of around 20 V. The thickened layer was effective in suppressing tunneling dark current. An output current of 1.7×l0−12 A at a bias voltage of 15 V was measured for an optical input with a wavelength of 1.5 μm and a signal power of 1 × 10−12 W. This showed a sharp distinction from the dark current. |
| Keywords: | avalanche photodiode superlattice InAlGaAs/InAlAs dark current ultra-low optical power near infrared |
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