提高极紫外光谱纯度的多层膜设计及制备

极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160～240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。

Design and Fabrication of the Multilayer Film of Enhancing Spectral-Purity in Extreme Ultraviolet

Extreme ultraviolet lithography (EUVL) has been regarded as a promising lithographic technology for the 22 nm hp node. It takes advantage of the light of extreme ultraviolet (EUV) whose wavelength is 13.5 nm. But in the 160~240 nm band, laser produced plasma light source spectral intensity, photoresist sensitivity and the reflectivity of multilayers are relatively large in the EUVL. The exposure of photoresist will reduce the lithographic quality in the out-of-band. It demonstrates that both theoretically and experimentally, coating the SiC layer on the Mo/Si multilayer can effectively suppress the out-of-band radiation. Designing and fabricating ［Mo/Si］40 SiC multilayers take advantage of X-ray diffraction, spectroscopic ellipsometry, vacuum ultraviolet (VUV) spectrophotometer to determine the thickness and optical constants of thin films and the reflectivity of multilayers. The reflectivity of the out-of-band reduces to 1/5, while the reflectivity of in-band only 5% reduction.