| Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO_2 |
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| 作者姓名： | HUANG Weiming XU Jun WU Guangzhao DENG Peizhen GAN Fuxi |
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| 作者单位： | Shanghai Institute of Optics and Fine Mechanics，Chinese Academy of Sciences，P. O. Box 800-216，Shanghai 201800，China |
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| 摘 要： | ＧｒｏｗｔｈａｎｄＣｒｙｓｔａｌｌｉｚａｔｉｏｎＨａｂｉｔｏｆａＮｏｖｅｌＳｕｂｓｔｒａｔｅＣｒｙｓｔａｌＬｉＧａＯ_２￥ＨＵＡＮＧＷｅｉｍｉｎｇ；ＸＵＪｕｎ；ＷＵＧｕａｎｇｚｈａｏ；ＤＥＮＧＰｅｉｚｈｅｎ；ＧＡＮＦｕｘｉ（ＳｈａｎｇｈａｉＩｎｓｔｉ?..
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| 收稿时间： | 1995/12/8 |
Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO_2 |
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| HUANG Weiming, XU Jun, WU Guangzhao,DENG Peizhen, GAN Fuxi.Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO_2[J].中国激光(英文版),1996,5(4):375-378. |
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| Authors: | HUANG Weiming XU Jun WU Guangzhao DENG Peizhen GAN Fuxi |
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| Abstract: | LiGaO2 is a new perferred substrate for the epitaxial growth of GaN visibleLEDs and laser diodes. The large-sized and high-quality single crystals of LiGaO2 up to 15mmin diameter and 50mm in length were grown by the Czochralski method. The crystal morphology of all developing facets was investigated. |
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| Keywords: | LiGaO_2 crystal substrate crystal |
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