Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals |
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| Authors: | I A Prokhorov Yu A Serebryakov I Zh Bezbakh B G Zakharov V V Ratnikov M P Shcheglov I L Shul’pina |
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| Institution: | (1) Graduate School of Life and Environmental Sciences, University of Tsukuba, Tsukuba Ibaraki, 305-8572, Japan;(2) Graduate School of Life and Environmental Sciences and Institute of Applied Biochemistry, University of Tsukuba, Tsukuba Ibaraki, 305-8572, Japan; |
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| Abstract: | Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals grown under various conditions of heat
and mass transfer are studied by methods of X-ray topography, high-resolution X-ray diffractometry, and digital image processing.
It is established that the inhomogeneity of crystals is determined by specific features of impurity microsegregation during
growth under conditions of nonstationary convection in a melt and by peculiarities of the dislocation structure of crystals.
The processes related to the initial stage of the decay of the Si supersaturated solid solution in GaSb contribute considerably
to the inhomogeneity of crystals on the micro- and macrolevels. |
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