| 具有反并联MCT的新型RC-IGBT |
| |
| 引用本文： | 朱利恒,陈星弼.具有反并联MCT的新型RC-IGBT[J].半导体学报,2014,35(7):074003-4. |
| |
| 作者姓名： | 朱利恒 陈星弼 |
| |
| 基金项目： | 国家自然科学基金(51237001), 中央高校基本科研业务费(基金号: E022050205) |
| |
| 摘 要： | Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.
|
| 关 键 词： | MOS控制晶闸管 导通电压 绝缘栅双极晶体管 反并联 反向 IGBT 自动控制 单个细胞 |
Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor |
| |
| Zhu Liheng and Chen Xingbi.Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J].Chinese Journal of Semiconductors,2014,35(7):074003-4. |
| |
| Authors: | Zhu Liheng and Chen Xingbi |
| |
| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
| |
| Abstract: | reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge |
| |
| Keywords: | reverse conducting IGBT snapback free turn-off energy reverse-recovery charge |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
| 点击此处可从《半导体学报》下载免费的PDF全文 |
