| ETV－ICP－AES中硼、钼、铬和硅的蒸发机理研究 |
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| 引用本文： | 胡斌,江祖成,曾云鹗. ETV－ICP－AES中硼、钼、铬和硅的蒸发机理研究[J]. 武汉大学学报(理学版), 1995, 0(2) |
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| 作者姓名： | 胡斌 江祖成 曾云鹗 |
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| 作者单位： | 武汉大学化学系 |
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| 基金项目： | 国家自然科学基金,国家教委博士点基金 |
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| 摘 要： | 研究了难熔元素硼、铬、钼和硅在石墨炉电热蒸发进样──ＩＣＰ－ＡＥＳ中的蒸发行为，探讨了以聚四氟乙烯为氟化剂改善难熔元素蒸发的方法．系统地考察了影响难熔元素氟化蒸发的因素，提出了难熔元素的蒸发机理．
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| 关 键 词： | 难熔元素，电热蒸发，等离子体光谱，聚四氟乙烯，蒸发机理 |
THE STUDY ON VAPORIZATION OF BORON, CHROMIUM,MOLYBDENUM AND SILICON FROM GRAPHITE FURNACE ETV-ICPAES |
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| Abstract: | In this paper,the vaporization behaviors of refractory elements (Boron,Chromium,Molybdenum and Silicon)in graphite furnace ETV-ICP-AES have been investigated,and a polytetrafluoroethylene slurry was used as chemical modifier to improve the vaporization of the refractory elements. The factors which influenced the fluorination vaporization process were systematically explored, and a proper vaporization mechanism was proposed. |
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| Keywords: | refractory elements polytetrafluoroethylene electrothermal vaporization plasma spectrometry vaporization mechanism. |
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