| 应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型 |
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| 引用本文： | 刘红侠,尹湘坤,刘冰洁,郝跃.应变绝缘层上硅锗p型金属氧化物场效应晶体管的阈值电压解析模型[J].物理学报,2010,59(12):8877-8882. |
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| 作者姓名： | 刘红侠 尹湘坤 刘冰洁 郝跃 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071 |
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| 基金项目： | 国家自然科学基金(批准号: 60976068,60936005)、 教育部科技创新工程重大项目培育基金(批准号:708083) 和中央高校基本科研基金(批准号: 200807010010) 资助的课题. |
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| 摘 要： | 分析研究了应变绝缘层上硅锗p型金属氧化物场效应晶体管(SGOI pMOSFET)的阈值电压模型,修正了应变作用下SGOI pMOSFET的能带模型,并提取了主要的物理参量.这些典型的参量包括禁带宽度、电子亲和能、内建势等.给出了应变硅SGOI pMOSFET内部电势分布的二维泊松方程,通过边界条件求解方程,得出了准确的阈值电压模型,并且验证了该模型的正确性.
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| 关 键 词： | 应变硅 绝缘层上硅锗 p型金属氧化物场效应晶体管 阈值电压解析模型 |
| 收稿时间： | 2010-03-12 |
Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor |
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| Liu Hong-Xia,Yin Xiang-Kun,Liu Bing-Jie,Hao Yue.Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor[J].Acta Physica Sinica,2010,59(12):8877-8882. |
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| Authors: | Liu Hong-Xia Yin Xiang-Kun Liu Bing-Jie Hao Yue |
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| Institution: | Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China |
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| Abstract: | This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor (SGOI pMOSFET), revises the energy band model of strained-silicon, and extracts the main physical parameters of strained-SiGe devices. These parameters include the energy gap, electron affinity, build-up potential, etc. In this paper, the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented. By using the boundary conditions to solve these equations, an accurate threshold voltage analytic model is proposed and its validity is verified. |
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| Keywords: | strained silicon SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor threshold voltage analytic model |
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