GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation |
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| Authors: | F Bastiman AG Cullis M Hopkinson |
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| Institution: | aThe University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield S1 3JD, UK |
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| Abstract: | Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the presence of an As4 flux. The relationship between the As-rich (2 × 4) and c(4 × 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 × 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As4 irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE–STM systems relying on sample quenching and transfer. |
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| Keywords: | Scanning tunnelling microscopy Molecular beam epitaxy (2 × 4) c(4 × 4) In vivo Concurrent |
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