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全丝印后栅CNT-FED仿真及器件研究
引用本文:杨雄,胡利勤,吴朝兴,陈勇,林志龙,郭太良.全丝印后栅CNT-FED仿真及器件研究[J].液晶与显示,2010,25(2).
作者姓名:杨雄  胡利勤  吴朝兴  陈勇  林志龙  郭太良
作者单位:福州大学,物理与信息工程学院,福建福州,350002
基金项目:国家"863"计划平板显示重大专项 
摘    要:模拟并制作了一种基于丝网印刷技术的后栅结构碳纳米管场发射显示器。采用有限元分析软件ANSYS对器件进行了电场模拟,优化了阴极宽度、阴极厚度、阴极间隙、介质层厚度等结构参数。取最优参数制作了像素为30×30,发光面积为54mm×54mm的单色显示屏。在阳压为1500V、栅压为300V时,器件发射电流密度达到5μA/cm2。该器件制作成本低,稳定性和均匀性良好,可矩阵寻址实现字符显示。

关 键 词:丝网印刷  后栅  场发射显示器  仿真

Simulation and Study of Under-Gate CNT-FED Via Screen Printing
YANG Xiong,HU Li-qin,WU Chao-xing,CHEN Yong,LIN Zhi-long,GUO Tai-liang.Simulation and Study of Under-Gate CNT-FED Via Screen Printing[J].Chinese Journal of Liquid Crystals and Displays,2010,25(2).
Authors:YANG Xiong  HU Li-qin  WU Chao-xing  CHEN Yong  LIN Zhi-long  GUO Tai-liang
Abstract:A screen printed under-gate triode structure device with carbon nanotube field emitters is studied and produced. The electric-field of the cathode is simulated by using the software of ANSYS and produced with the best parameters. The pixels of the device are 30×30 and the display area is 54 mm × 54 mm. The currents density achieved 5 μA/cm2 when the anode voltage was 1 500 V and gate voltages was 300 V. The device has low production cost, a good stability and uniformity, and can be matrix-addressable to display words and pictures.
Keywords:ANSYS  screen printed  under-gate  ANSYS  field emission display  simulation
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