| 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响 |
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| 引用本文： | 王书方,李喜峰,张建华. 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响[J]. 发光学报, 2010, 31(6): 848-853 |
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| 作者姓名： | 王书方 李喜峰 张建华 |
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| 作者单位： | 上海大学新型显示及应用集成教育部重点实验室,上海200072;上海大学机电工程与自动化学院,上海200072;上海大学新型显示及应用集成教育部重点实验室,上海,200072 |
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| 基金项目： | 国家自然科学基金(51072111); 上海市科委发展基金(08DZ1140603,08QH14007); 教育部新世纪优秀人才支持计划(NCET-07-0535)资助项目 |
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| 摘 要： | ZnO∶Ga(GZO)透明电极沉积在p-GaN表面,用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒,容易形成肖特基接触,而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒,采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理,并对p-GaN/GZO进行退火处理,研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后,接触势垒略有增加。
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| 关 键 词： | p-GaN ZnO:Ga透明电极 表面化学处理 接触特性 |
| 收稿时间： | 2009-12-21 |
| 修稿时间： | 2010-06-07 |
Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO: Ga Contact |
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| WANG Shu-fang,LI Xi-feng,ZHANG Jian-hua. Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO: Ga Contact[J]. Chinese Journal of Luminescence, 2010, 31(6): 848-853 |
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| Authors: | WANG Shu-fang LI Xi-feng ZHANG Jian-hua |
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| Affiliation: | 1. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;2. School of Mechanical & Electronic Engineering and Automation, Shanghai University, Shanghai 200072, China |
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| Abstract: | ZnO:Ga (GZO) transparent conductive thin film was deposited on p-GaN acting as the current spreading layer, but it leads to a large contact barrier because of the formation of Schottky contact. However, ohmic contact is of great importance to powered LED. In order to decrease the contact barrier, HCl and NaOH treatment of the p-GaN surface and annealing were employed in this work. The effects of different chemical treatment and annealing on p-GaN/GZO contact property were studied. It is obvious that solutions of alkaline treatment of p-GaN surface can decrease the interfacial barrier, which led to ohmic contact, and the barrier can be lightly increased by annealing. |
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| Keywords: | p-GaN surface chemical treatment ohmic contact ZnO：Ga transparent electrode |
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