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Influence of Width of Left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells
Authors:LEI Shuang-Ying  SHEN Bo  ZHANG Guo-Yi
Affiliation:Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Abstract:
Keywords:73.21.Fg  72.80.Ey  03.65.Ge
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