Enhanced photoluminescence from photonic crystal-coated GaN LED wafers |
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Authors: | F Rahman and A Z Khokhar |
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Institution: | (1) Toyohashi University of Technology, Toyohashi Aichi, 441-8580, Japan;(2) Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia |
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Abstract: | This paper describes results of studies on photoluminescence from blue-emitting GaN LED wafers coated with a layer of synthetic
opal photonic crystals. Commercial LED wafer material was used and samples were coated with thin films consisting of several
layers of stacked spherical polystyrene balls. Various optical measurements were performed on these samples while they were
excited with a 405 nm laser beam. Diffraction pattern due to the photonic crystal structure, showing the underlying six-fold
symmetry, was recorded. The spectrum and angle-resolved intensity of photoluminescence were measured to understand the coupling
of LED light with the grown photonic crystal structure on top of the wafer. |
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Keywords: | |
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