Chemical interaction of CdTe and Cd1? x Zn x single crystals with aqueous H2O2 + HBr + Citric acid solutions

The chemical etching of single crystals of CdTe and Cd_1−x Zn _x Te solid solutions in bromine-evolving aqueous H₂O₂ + HBr + citric acid solutions is considered. Simplex design of experiments is used to construct the projections of etching rate isosurfaces and to map the polishing and nonpolishing composition regions. Dissolution in the polishing etchants is diffusion-controlled. As the zinc content of Cd_1−x Zn _x Te is raised, the etching rate increases; the boundaries of the polishing region do not change to any significant extent. The polish composition and the dynamic chemical polishing conditions are optimized for the semiconductors examined. Original Russian Text ? Z.F. Tomashik, I.I. Gnativ, V.N. Tomashik, I.B. Stratiichuk, 2007, published in Zhurnal Neorganicheskoi Khimii, 2007, Vol. 52, No. 7, pp. 1234–1238.