参杂GaAs量子点的电子结构

用有效质量近似和少体物理方法计算了在抛物势中，参杂（一个带正电荷）GaAs量子点中有7个极化电子时的本征能量和本征波函数，并从本征波函数中提取的一体、二体密度函数方法得到了电子结构的直观图像，用对称性对量子点中库仑相互作用能和电子结构进行了分析。

Electronic structures of doped GaAs quantum dots

With the effective-mass approximation and the method of few-body physics, the eigenvalue of energy and the eigen-wave-function of doped( with a positive impurity ) GaAs quantum dots in the polarized seven electrons has been calculated in the parabolic potential energy , and the clear the electronic structures has been gained by the methods the one-body and two-body density function , the electronic structures and the Coulomb interaction energy in the quantum dots are analyzed with the symmetry constraints .