Photothermal deflection spectroscopy study of defects in semi-insulating GaAs |
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| Authors: | U Zammit F Gasparrini M Marinelli R Pizzoferrato F Scudieri S Martellucci |
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| Institution: | (1) Dipartimento di Ingegneria Meccanica, II Università di Roma  Tor Vergata , via E. Carnevale, I-00173 Roma, Italy |
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| Abstract: | Subgab absorption measurements carried out by photothermal deflection spectroscopy in semi-insulating GaAs are used to study the concentration of defects found in as-grown and in heat treated material. Measurements carried out in ion-implanted and furnace-annealed samples prove to be a useful tool for monitoring the successful recovery of the ion implantation damage. |
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| Keywords: | 78 20 Dj 78 20 Nv 71 55 Jv |
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