| Abstract: | Insulating films of thickness 102–104 Å are used in microelectronic devices for insulation and charge storage and control. The basic electrical parameters of such films are the electrical strength and the charge. Real MIS and MIM systems made by the best methods are essentially inhomogeneous objects with numerous macroscopic and microscopic defects, which occur not only within the insulator (pores, cracks, inclusions, and so on) but also at the metal-insulator interface (microscopic ridges on the electrodes). Therefore, a major problem is to examine the behavior of insulating film in relation to time in strong electric fields, at high temperatures, with high humidity, and other such factors in the environment. This enables one to evaluate the degree of defectiveness in actual MIS systems and to identify defects during electrical aging.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 116–118, July, 1976. |
