Radial distribution measurement of SiH* in a low-pressure silane plasma |
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Authors: | Yuichiro Asano Douglas S Baer Rolf Hernberg Ronald K Hanson |
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Institution: | (1) Technical Research Division, Kawasaki Steel Corporation, 1 Kawasakicho, Chiba 280, Japan;(2) High-Temperature Gasdynamics Laboratory, Mechanical Engineering Department, Stanford University, 94305, California;(3) Electrical Engineering Department, Tampere University of Technology, SF-33101 Tampere, Finland |
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Abstract: | The radial emission intensity distribution of SiH* (A2,v=0) over the substrate of a low-pressure silane plasma was investigated for various substrate temperatures (T
s=20–320°C). Measured lateral intensities were converted to radial emission coefficients using an Abel inversion. The intensity near the center of the substrate was found to increase withT
s and yielded an activation energyE
a of 1.1 kcal/mole. This result is consistent with the value ofE
a determined by laser-induced flourescence measurements obtained previously. Radially resolved emission data obtained by varying the operating parameters of rf power, gas flow rate, silane/argon mixing rate, and total gas pressure provide a useful means of determining the conditions necessary to generate a uniform plasma. |
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Keywords: | Optical emission spectroscopy Abel inversion rf discharge silane plasma |
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