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Radial distribution measurement of SiH* in a low-pressure silane plasma
Authors:Yuichiro Asano  Douglas S Baer  Rolf Hernberg  Ronald K Hanson
Institution:(1) Technical Research Division, Kawasaki Steel Corporation, 1 Kawasakicho, Chiba 280, Japan;(2) High-Temperature Gasdynamics Laboratory, Mechanical Engineering Department, Stanford University, 94305, California;(3) Electrical Engineering Department, Tampere University of Technology, SF-33101 Tampere, Finland
Abstract:The radial emission intensity distribution of SiH* (A2Delta,v=0) over the substrate of a low-pressure silane plasma was investigated for various substrate temperatures (T s=20–320°C). Measured lateral intensities were converted to radial emission coefficients using an Abel inversion. The intensity near the center of the substrate was found to increase withT s and yielded an activation energyE a of 1.1 kcal/mole. This result is consistent with the value ofE a determined by laser-induced flourescence measurements obtained previously. Radially resolved emission data obtained by varying the operating parameters of rf power, gas flow rate, silane/argon mixing rate, and total gas pressure provide a useful means of determining the conditions necessary to generate a uniform plasma.
Keywords:Optical emission spectroscopy  Abel inversion  rf discharge  silane plasma
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