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Distinctive field dependence of the longitudinal muon polarization for Mu* in polycrystalline silicon
Authors:D. Wayne Cooke  Melvin Leon  Michael A. Paciotti  Peter F. Meier  Stephen F. J. Cox  Edward A. Davis  Thomas L. Estle  Bassam Hitti  Roger L. Lichti  Carolus Boekema  John Lam  Anny Morrobel-Sosa  Jean Oostens
Affiliation:(1) Los Alamos National Laboratory, 87545 Los Alamos, NM, USA;(2) Physik-Institut der Universität Zürich, CH-8057 Zürich, Switzerland;(3) Rutherford Appleton Laboratory, OX11 OQX Chilton, Oxon, UK;(4) Department of Physics and Astronomy, University of Leicester, LE1 7RH, UK;(5) Department of Physics, Rice University, 77251 Houston, TX, USA;(6) Department of Physics, Texas Tech University, 79409 Lubbock, TX, USA;(7) Department of Physics, San Jose State University, 95192 San Jose, CA, USA;(8) California Polytechnic State University, 93407 San Luis Obispo, CA, USA;(9) Science Department, Lindsey Wilson College, 42728 Columbia, KY, USA
Abstract:A distinctive longitudinal magnetic field dependence of the muon polarization for anomalous muonium in polycrystalline semiconductor targets has been predicted. The polarization exhibits a cusp,i.e., a discontinuous jump in the slope from negative to positive. Measurements of the longitudinal polarization for polycrystalline silicon in fields up to 0.5 T, and temperatures 53 and 200 K have been made at LAMPF. A cusp in the field dependence indeed occurs at 0.345 T, in excellent agreement with the prediction. No cusp is observed at 200 K because Mu* has been thermally ionized.
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