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X-Ray diffractometry of metamorphic nanoheterostructures |
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| Authors: | G B Galiev S S Pushkarev E A Klimov P P Maltsev R M Imamov I A Subbotin |
| Institution: | 1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi proezd 7(5), Moscow, 117105, Russia 2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia 3. National Research Centre “Kurchatov Institute”, pl. Akademika Kurchatova 1, Moscow, 123182, Russia |
| Abstract: | Elastic strains in active regions of metamorphic transistor nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As on GaAs substrates with a metamorphic buffer (MB) having different complex designs have been determined by X-ray diffractometry. The objects of study are linear-graded MBs with different thicknesses, including those with internal strain-balanced superlattices or internal inverse steps, and a step-graded MB. All MBs are completed with an inverse step. The experimental results are compared with model predictions for hypothetical linear-graded MBs with the same average compositional gradients as for the samples under study. |
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