Anisotropy of the EPR line shape of dislocation acceptor centers in semiconducting type Ic diamonds |
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| Authors: | S N Samsonenko |
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| Institution: | 1. Donbas National Academy of Civil Engineering and Architecture, ul. Derzhavina 2, Makeyevka, Donetsk oblast, 86123, Ukraine
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| Abstract: | The shape anisotropy of the EPR lines of broken carbon bonds in a dislocation core with an edge component in natural semiconducting type Ic diamonds has been investigated. It has been found that electrically active acceptor centers are formed at dislocation steps, jogs, or kinks. The distance between the paramagnetic centers is determined. |
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