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The crystal growth and perfection of 2,4,6-trinitrotoluene |
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| Authors: | Hugh G Gallagher Ranko M Vrcelj John N Sherwood |
| Institution: | a Department of Physics and Applied Physics, University of Strathclyde, Glasgow, G1 1XN, Scotland, UK b Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow, G1 1XL, Scotland, UK |
| Abstract: | Large crystals of TNT were grown from ethyl acetate solution by both temperature lowering and solvent evaporation. The perfection of crystals grown from seeds under carefully controlled conditions was generally higher than those prepared by uncontrolled solvent evaporation. Examination by X-ray topography revealed the crystals to have a characteristic growth induced defect structure comprising growth sectors and boundaries, growth banding, solvent inclusions and dislocations. Twins and stacking faults (SF) were also observed. Many of the defects noted in the topographs can be attributed to impurities. The influence of the highly anisotropic crystal structure on the nature of growth defects is discussed. A structural model proposed to explain twinning and SF formation is partially supported by topographic evidence. |
| Keywords: | A1 X-ray topography B1 Organic compounds |
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