| 电沉积法制备Bi2S3薄膜研究 |
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| 引用本文： | 王艳,黄剑锋,曹丽云,曾燮榕,熊信柏,吴建鹏. 电沉积法制备Bi2S3薄膜研究[J]. 人工晶体学报, 2009, 38(4): 916-919 |
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| 作者姓名： | 王艳 黄剑锋 曹丽云 曾燮榕 熊信柏 吴建鹏 |
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| 作者单位： | 陕西科技大学教育部轻化工助剂化学与技术重点实验室,西安,710021;陕西科技大学教育部轻化工助剂化学与技术重点实验室,西安,710021;深圳大学深圳市特种功能材料重点实验室,深圳,518060;深圳大学深圳市特种功能材料重点实验室,深圳,518060 |
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| 基金项目： | 教育部"新世纪优秀人才支持计划"，深圳市特种功能材料重点实验室基金，陕西科技大学研究生创新基金 |
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| 摘 要： | 采用阴极恒电压法在ITO导电玻璃表面沉积了Bi2S3薄膜,利用X射线衍射(XRD)、原子力显微镜(AFM)对制备的薄膜进行了表征.研究了pH值、沉积时间、沉积液浓度等工艺因素对薄膜的影响.结果表明:电沉积制备Bi2S3薄膜的过程中,合适的Bi3+与S2O32-的浓度水平是至关重要的;在电沉积溶液pH=6.5,沉积时间为20 min,沉积电压为1 V,加入柠檬酸三钠作络合剂的情况下,得到沿(240)晶面生长良好的Bi2S3薄膜,薄膜组成均匀致密;增加沉积溶液pH值,薄膜的结晶程度逐渐提高,红外透过比提高.
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| 关 键 词： | Bi2S3薄膜 电沉积 pH值, |
Preparation of Bi_2S_3 Thin Films by Electrodeposition Method |
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| WANG Yan,HUANG Jian-feng,CAO Li-yun,ZENG Xie-rong,XIONG Xin-bo,WU Jian-peng. Preparation of Bi_2S_3 Thin Films by Electrodeposition Method[J]. Journal of Synthetic Crystals, 2009, 38(4): 916-919 |
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| Authors: | WANG Yan HUANG Jian-feng CAO Li-yun ZENG Xie-rong XIONG Xin-bo WU Jian-peng |
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| Affiliation: | 1.Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry;Ministry of Education;Shaanxi University of Science & Technology;Xi'an 710021;China;2.Shenzhen Key Laboratory for Special Functional Materials;Shenzhen University;Shenzhen 518060;China |
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| Abstract: | Bi2S3 thin films were deposited on ITO substrates by constant voltage cathodic electrodeposition process.The as-deposited thin films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM) and FTIR spectra.The influence of solution concentration on the phase compositions and morphologies of the thin films were investigated.The results show that it is important to control the concentration of Bi3+and S2O32-during the deposition process.Bi2S3 thin films with oriented growth along(240) direct... |
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| Keywords: | Bi2S3 thin films electrodeposition pH value |
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