Study on measurement of linear electro-optic coefficient of a minute irregular octahedron cBN wafer |
| |
Authors: | Qingping Dou Haitao Ma Gang Jia Zhanguo Chen Kun Cao Tiechen Zhang |
| |
Affiliation: | aCollege of Electronic Science and Engineering, Jilin University, 2519 Jiefang Road, Changchun 130023, PR China;bMudanjiang Normal Institute, Mudanjiang 157012, PR China;cInstitute NO.25 of The Second Academy China Aerospace Science and Industry Corp, Beijing 100854, PR China;dState Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China |
| |
Abstract: | The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample-λ/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4°, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8° by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, . The analysis of the experimental resulting error was carried out. |
| |
Keywords: | cBN PSCA transverse EO modulator EO coefficient |
本文献已被 ScienceDirect 等数据库收录! |
|