首页 | 本学科首页   官方微博 | 高级检索  
     

类氖等电子系列离子基态的双电子复合速率系数研究
引用本文:杨建会,范强,张建平. 类氖等电子系列离子基态的双电子复合速率系数研究[J]. 物理学报, 2012, 61(19): 193101-193101
作者姓名:杨建会  范强  张建平
作者单位:乐山师范学院物理与电子工程学院,乐山,614004
基金项目:四川省教育厅项目(批准号: 10ZC109)、 乐山师范学院项目(批准号: Z1165) 和四川省科技厅项目(批准号: 2011JYZ005) 资助的课题.
摘    要:使用全相对论组态相互作用方法, 能级-能级细致计算了0.1 EIkTe≤ 10 EI (EI是类钠离子基态的第一电离能) 温度范围内类氖离子基态双电子复合(DR)速率系数, 双激发自电离能级考虑了(2s2p)73ln'l', (2s2p)74l4l' 以及(2s2p)74l5l'组态. 对于(2s2p)73ln'l'双激发自电离组态, 轨道角量子数l' >8 的(2s2p)73ln'l'双激发自电离态对双电子复合速率系数的贡献可以忽略不计; (2s2p)73ln'l'双激发自电离组态的高里德堡态对双电子复合速率系数的贡献满足 n'-3组态-组态外推法, 并且核电荷数越大, 趋于n'-3标度的n'值越小; 对细致能级计算得到的类氖离子基态的总DR速率系数进行了拟合, 得到类氖离子基态的总DR速率系数随核电荷数 Z和电子温度变化的经验公式, 该拟合公式与细致计算结果的偏差在2%以内, 能较准确的计算任意核电荷数Z的类氖离子在0.1EIkTe ≤ 10EI电子温度范围的DR速率系数. Burgess-Merts(BM)近似公式不适用于估算低温(kTe<0.3 EI)类氖离子的DR速率系数, 在高温(kTe>2EI)时, 类氖离子的DR速率系数可以用BM近似公式表示.

关 键 词:相对论组态相互作用  双电子复合  类氖离子  速率系数
收稿时间:2012-01-11

The study of dielectronic recombination (DR) rate coefficient for ground state of Ne-like isoelectronic sequence ions
Yang Jian-Hui,Fan Qiang,Zhang Jian-Ping. The study of dielectronic recombination (DR) rate coefficient for ground state of Ne-like isoelectronic sequence ions[J]. Acta Physica Sinica, 2012, 61(19): 193101-193101
Authors:Yang Jian-Hui  Fan Qiang  Zhang Jian-Ping
Affiliation:College of Physics and Electronic Engineering, Leshan Normal University, Leshan 614004, China
Abstract:The dielectronic recombination (DR) rate coefficients for Ne-like isoelectronic sequence ions in the ground state 2s22p6 are calculated by using relativistic configuration interaction (RCI) method over a wide temperature ranging from 0.1EI to 10EI where EI is the ionization energy of corresponding Na-like ion. The (2s2p)73ln'l', (2s2p)74l4l' and (2s2p)74l5l' complexes are considered as autoionizing doubly excited states of Ne-like ions in the calculation. The contribution of (2s2p)73ln'l' complex with l' >8 is found to be negligible. The contribution of high Rydberg states of (2s2p)73ln'l' complex obeys the complex-complex n'-3 extrapolation, and the larger the nuclear charge, the smaller the value of n' is. On the basis of the detailed level-by-level results, a general analytic formula for the total DR rate coefficient for all the ions along the Ne-like isoelectronic sequence is constructed. This formula can generally reproduce the calculated DR rate coefficients within 2% for electron temperature between 0.1EI and 10EI. Burgess-Merts semiempirical formula is found to be inadequate for predicting the DR rates of Ne-like ions at low electron temperatures (kTe<0.3EI) and may be used for high electron temperatures (kTe > 2EI).
Keywords:relativistic configuration interaction(RCI)  dielectronic recombination(DR)  Ne-like isoelectronic sequence ions  rate coefficient
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号