| 钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响 |
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| 引用本文： | 王银博,薛驰,冯庆荣. 钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响[J]. 物理学报, 2012, 61(19): 197401-197401 |
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| 作者姓名： | 王银博 薛驰 冯庆荣 |
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| 作者单位： | 北京大学物理学院,北京大学人工微结构与介观国家重点实验室,北京大学应用超导研究中心,100871 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2006CD601004, 2011CB605904, 2011CBA00104)和国家基础科学人才培养基金(批准号: J0630311)资助的课题． |
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| 摘 要： | 利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB2超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB2样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 1013/cm2的样品的临界电流密度达到了1.72× 105 A/cm2, 比干净的MgB2要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.
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| 关 键 词： | MgB2超导薄膜 钛离子辐照 钛掺杂 混合物理化学气相沉积法 |
| 收稿时间： | 2012-01-03 |
The effects of Ti ion-irradiation on critical current and flux pinning in MgB2 thin film |
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| Wang Yin-Bo,Xue Chi,Feng Qing-Rong. The effects of Ti ion-irradiation on critical current and flux pinning in MgB2 thin film[J]. Acta Physica Sinica, 2012, 61(19): 197401-197401 |
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| Authors: | Wang Yin-Bo Xue Chi Feng Qing-Rong |
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| Affiliation: | Application Superconductivity Research Center, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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| Abstract: | High-quality MgB2 films are fabricated via hybrid physical-chemical vapor deposition (HPCVD) and irradiated by Ti ions. Compared with the unirradiated film, the Ti-irradiated MgB2 film shows a high critical current density (Jc) in magnetic field and also a high upper critical field (Hc2), while the superconducting transition temperature (Tc) does not decrease significantly. The Ti-irradiated film with a best fluence at 1× 1013/cm2 shows a high Jc of 1.72× 105 A/cm2 in 4 T perpendicular field at a temperature of 5 K and a moderately decreased Tc at 39.9 K. |
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| Keywords: | MgB2 thin films Ti ion-irradiation hybrid physical-chemical vapor deposition |
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