Concentration dependence of the solid-phase epitaxial growth rate in Te implanted Si

The growth rate during solid-phase epitaxy of Te implanted (100) silicon has been measured at 520°C as a function of the Te concentration in the range of 4×10¹⁹–10²¹ atoms/cm³. With increasing concentration the velocity decreases from about 50 Å/min to about 1 Å/min and it equals the value corresponding to undoped amorphous Si at 7×10¹⁹ atoms/cm³. This result and previous date on B, P, As, O, and C implantation, imply that the growth rate reaches a maximum value in a broad range of concentration close to the solid solubility limit of the considered dopant.