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The effects of photoexcitation on excitons in semiconductor doping superlattices
Authors:T L Reinecke
Institution:

Naval Laboratory, Washington, D.C. 20375, USA

Martin Marietta Research Laboratories, Baltimore, MD 21227, USA

Abstract:Calculations of the properties of excitons in doping superlattices have been made as a function of doping density using a variational approach. Interesting new features are obtained when the exciton energy becomes comparable to the superlattice potential energy. These results are compared to recent experimental data on GaAs doping superlattices.
Keywords:
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