Ad-atom interactions with III-V semiconductor surfaces

Photoemission techniques (core level, valence band and partial yield spectroscopies) using synchrotron radiation as the excitation source have been applied to study the changes in the surface electronic structure of the (110) cleavage face of III-V semiconductor surfaces as a function of different ad-atom coverages. In this paper we concentrate on Au overlayers on GaSb and in particular address the problem of the mechanism for Fermi level pinning and the formation of Schottky barrier heights. It appears that the Fermi level pinning is fully established at a small fraction of a monolayer coverage. Core level spectroscopy gives evidence for a strong metal-semiconductor interaction leading to decomposition of GaSb at the interface. The experimental results form the basis for proposing a new model for the Schottky barrier based on defect states at the interface.