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Correlations betweenT c andn s/m * (carrier density/ effective mass) in high-T c and organic superconductors
Authors:Y J Uemura  L P Le  G M Luke  B J Sternlieb  J H Brewer  J Carolan  W Hardy  R Kadono  R F Kiefl  S R Kreitzman  T M Riseman  C L Seaman  J J Neumeier  M B Maple  G Saito  H Yamochi  H Takagi  S Uchida  J Gopalakrishnan  M A Subramanian  A W Sleight  Gang Xiao
Institution:(1) Dept. of Physics, Columbia University, 10027 New York City, New York, USA;(2) TRIUMF and Dept. of Physics, University of British Columbia, Vancouver, B.C., Canada;(3) Dept. of Physics, University of California, 92093 San Diego, Culifornia, USA;(4) Inst. for Solid State Physics, University of Tokyo, Roppongi, 106 Tokyo, Japan;(5) Engineering Research Inst., University of Tokyo, 113 Tokyo, Japan;(6) Du Pont Experimental Station, 19880-0262 Wilmington, Delaware, USA;(7) Dept. of Chemistry, Oregon State University, 27331 Corvallis, Oregon, USA;(8) Dept. of Physics, Brown University, 02912 Providence, Rhode-Island, USA
Abstract:We update our muon spin relaxation studies of the magnetic field penetration depth which show the correlations betweenT c and the relaxation rate σ αn s/m * (carrier density/effective mass) of hole-doped high-T c cuprate superconductors (La2, Sr3)CuO4, YBa2Cu3O7 (Y1−xPrx)Ba2Cu3O7, and other double and triple layer systems. These studies are extended to the organic superconductor (BEDT-TTF)2Cu(NCS)2.
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