New class of highly sensitive terahertz detectors |
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| Authors: | D R Khokhlov A V Galeeva D E Dolzhenko and L I Ryabova |
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| Institution: | (1) College of Nanoscale Science and Engineering, The University at Albany-SUNY, 12203 Albany, NY, USA;(2) Dean, JSNN, 2901 East Lee Street, Suite 2200, 27401 Greensboro, NC, USA;(3) IBM T. J. Watson Research Center, 10598 Yorktown Heights, NY, USA |
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| Abstract: | The properties of doped semiconductors based on lead telluride, which can be used to design highly sensitive terahertz photodetectors,
are described. It is shown that these properties allow one to develop photodetectors with much better parameters than those
of the best world analogs. |
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