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Photoluminescence spectra of MOCVD-grown P-doped GaAS/Alx Ga1-x As MQW |
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| Authors: | J S A Adelabu |
| Abstract: | PhotoLuminescence (PL) measurement techniques have been used to investigate on MOCVD grown P-doped GaAs/AlxGa1mx As (x=0.3) Multiple Quantum Wells (MQW). The spectra reveal extrinsic luminescence characteristics of e-A0 transitions for interface and centre of well acceptors in addition to both bound and free exciton emissions. |
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