Formation and charge control of a quantum dot by etched trenches and multiple gates |
| |
| Authors: | Y. Fu M. Willander T.H. Wang |
| |
| Affiliation: | Institute of Physics, Chinese Academy of Science, No. 8, South 3rd Street, Zhongguancun, 100?080 Beijing, P.R. China, CN
Physical Electronics and Photonics, Microtechnology Centre at Chalmers, Department of Microelectronics and Nanoscience, Chalmers University of Technology, Fysikgr?nd 3, 412?96 G?teborg, Sweden, SE
|
| |
| Abstract: | We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schr?dinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation. Received: 18 October 2001 / Accepted: 6 January 2002 / Published online: 20 March 2002 |
| |
| Keywords: | PACS: 73.20.Dx 73.20.Dn |
| 本文献已被 SpringerLink 等数据库收录！ |
|
