Effects of implantation defects on the carrier concentration of 6H-SiC |
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Authors: | A Ruggiero S Libertino F Roccaforte F La Via L Calcagno |
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Institution: | (1) Sezione di Catania, CNR-IMM, Stradale Primosole 50, 95121 Catania, Italy;(2) Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania, Italy |
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Abstract: | The effects of ion irradiation defects on the carrier concentration of 6H-SiC epitaxial layer were studied by current–voltage
(I–V), capacitance.-voltage (C–V) measurements, thermally stimulated capacitance and deep level transient spectroscopy. The
defects were produced by irradiation with 10 MeV C+ at a fluence of 1011 ions/cm2 and subsequent thermal annealings were carried out in the temperature range 500–1700 K under N2 flux.
I–V and C–V measurements reveal the presence of a high defect concentration after irradiation and annealing at temperature
lower than 1000 K. Thermally stimulated capacitance measurements show that some of the defects induce a deactivation of the
nitrogen donor, while some of the generated defects, behaving as donor-like traps, contribute to increase the material free
carrier concentration at temperatures above their freezing point.
Deep level transient spectroscopy measurements performed in the temperature range 150–450 K show the presence of several overlapping
traps after ion irradiation and annealing at 1000 K: these traps suffer a recovery and a transformation at higher temperatures.
The annealing of all traps at temperatures as high as 1700 K allows one to completely restore the n-type conductivity. The
defects mainly responsible of the observed change in the carrier concentration are identified.
PACS 73.30.+y; 61.80.Jh; 61.82.Fk; 85.30.Hi |
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Keywords: | |
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