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Hydrogen peroxide treatment on ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts |
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| Authors: | Chia-Hung Tsai Cheng-Fu Yang |
| Institution: | a Institute of Microelectronics, Department of Electrical Engineering, No. 1 Ta-Hseuh Road, National Cheng-Kung University, Tainan, Taiwan b Department of Mechanical Engineering, National Cheng-Kung University, Tainan, Taiwan c Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan |
| Abstract: | We utilize hydrogen peroxide (H2O2) treatment on (0 0 0 1) ZnO substrates to investigate the characteristics of Pt and Pt oxide Schottky contacts (SCs). X-ray rocking curves show the mosaicity structure becomes larger after H2O2 treatment. Photoluminescence (PL) spectra show the yellow-orange emission peaking at ∼576-580 nm with respect to deep level of oxygen interstitials introduced by H2O2 treatment. The threshold formation of ZnO2 resistive layer on H2O2-treated ZnO for 45 min is observed from grazing-incidence X-ray diffraction. The better electrical characteristic is performed by Pt oxide SC with the larger barrier height (1.09 eV) and the lower leakage current (9.52 × 10−11 A/cm2 at −2 V) than Pt SC on the H2O2-treated ZnO for 60 min. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS) examinations indicate the promoted interface oxide bonding and Zn outdiffusion for Pt oxide contact, different from Pt contact. Based on current-voltage, capacitance-voltage, X-ray diffraction, PL spectra, XPS, and SIMS results, the possible mechanism for effective rectifying characteristic and enhanced Schottky behavior is given. |
| Keywords: | ZnO Hydrogen peroxide Pt (oxide) Schottky contact Schottky barrier height |
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