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Effect of oxygen content and deposition temperature on the characteristics of thin silver films deposited by magnetron sputtering
Authors:W.M. Kim  D.Y. Ku  K.S. Lee
Affiliation:a Electronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea
b EXAX Co. Ltd., 310, Gongdan-dong, Gumi-city, Kyungsangbuk-do 730-030, Republic of Korea
Abstract:Thin silver films were prepared by direct current magnetron sputtering in a single-ended in-line sputter system at various substrate temperatures and in O2 contents in sputter gas, and their electrical, optical, structural and morphological properties together with the compositional properties were investigated. When deposited at room temperature, the electrical and optical properties of Ag films deteriorated with addition of O2 to sputter gas. Deposition of Ag films in O2 added sputter gas promoted the formation of Ag crystallites with (2 0 0) plane parallel to the substrate surface. The electrical resistivity and optical reflection of Ag films deposited above 100 °C were not affected by the sputtering plasma containing oxygen. X-ray photoelectron spectroscopic analysis showed that Ag films deposited above 100 °C in O2 added sputter gas did not possess surplus oxygen in the film, and that the oxidation states of these films were almost identical to that of Ag films deposited in pure Ar gas.
Keywords:81.05.Bx   68.55.-a
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