首页 | 本学科首页   官方微博 | 高级检索  
     检索      


AlNxOy thin films deposited by DC reactive magnetron sputtering
Authors:J Borges  F Vaz
Institution:Departamento/Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal
Abstract:AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resistivity of the coatings are strongly correlated with discharge parameters. Varying the reactive gas mixture partial pressure, the film properties change gradually from metallic-like films, for low reactive gas partial pressures, to stoichiometric amorphous Al2O3 insulator films, at high pressures. For intermediate reactive gas pressures, sub-stoichiometric AlNxOy films were obtained, with the electrical resistivity of the films increasing with the non-metallic/metallic ratio.
Keywords:Aluminium oxide  Aluminium nitride  DC magnetron  Reactive sputtering  Morphology  Structure  Electrical resistivity
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号