Wetting and evaporation behaviors of molten Mg on partially oxidized SiC substrates |
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Authors: | Dan Zhang Laixin Shi Qiaoli Lin Qichuan Jiang |
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Institution: | Key Laboratory of Automobile Materials of Ministry of Education, Department of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun 130025, PR China |
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Abstract: | The wetting and evaporation behaviors of molten Mg drops on pressureless-sintered SiC surfaces were studied in a flowing Ar atmosphere at 973-1173 K by an improved sessile drop method. The initial contact angles are between 83° and 76°, only mildly depending on temperature. The formation of a ridge at the triple junction as a result of reaction between molten Mg and the SiO2 film on the SiC surface pins the triple line and leads to a constant contact diameter mode during the entire evaporation process. Moreover, the diffusion coefficients of the Mg vapor at different temperatures were evaluated based on a simple model. |
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Keywords: | Wetting Evaporation Mg Diffusion |
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