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CuPd interface charge and energy quantum entrapment: A tight-binding and XPS investigation |
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| Authors: | Yanguang Nie Yi Sun BR Mehta SM Shivaprasad |
| Institution: | a School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore b Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore 117602, Singapore c Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110016, India d Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India e Faculty of Materials, Optoelectronics and Physical Science, Xiangtan University, Xiangtan 411105, China |
| Abstract: | Materials at heterojunction interfaces demonstrate many physical and chemical properties that are indeed fascinating with mechanisms that need yet to be explored. We show herewith that the “interface charge and energy quantum entrapment due to bond order distortion and bond nature alteration” perturbs essentially the Hamiltonian and hence the binding energy of the CuPd alloy interface. Analyzing the X-ray photoelectron emission of the thermally induced evolution of the Cu 2p and Pd 3d core-level energies at the Cu-Pd interface before and after thermally alloying revealed that the Pd 3d and Cu 2p interfacial potential traps are 0.36 and 0.95 times deeper than the potential wells of the corresponding bulk constituents standing alone. |
| Keywords: | Heterojunctions Nanofabrications EXAFS NEXAFS SEXAFS Electronic band structure Photoelectron spectroscopies |
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