Co-sensitized quantum dot solar cell based on ZnO nanowire |
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Authors: | J. Chen W. Lei J.L. Song X.W. Sun |
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Affiliation: | a School of Electronic Science and Engineering, Southeast University, Sipai Lou 2#, JinLing Yuan 109, Nanjing 210096, China b Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore c School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore |
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Abstract: | An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV-vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm−2). |
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Keywords: | 81.07.Ta 85.35.Be |
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