High-temperature diffusion of phosphorus and boron in silicon via vacancies or via self-interstitials?

The paper re-examines the effect of oxidation on the diffusion of phosphorus and boron in silicon as well as recent results on redistribution phenomena of these dopants under irradiation and on the emitter-push effect. It is shown that at high temperatures phosphorus and boron diffuse via a defect mechanism involving silicon self-interstitials. These results support the view-point that self-interstitials are the dominating point defects in silicon under thermal equilibrium conditions. Possible generation mechanisms for the self-interstitial supersaturation causing the emitter-push effect are suggested.