| ArF激光光致抗蚀剂的研究进展 |
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| 引用本文： | 余尚先,杨凌露,张改莲. ArF激光光致抗蚀剂的研究进展[J]. 影像科学与光化学, 2003, 21(1): 61-71. DOI: 10.7517/j.issn.1674-0475.2003.01.61 |
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| 作者姓名： | 余尚先 杨凌露 张改莲 |
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| 作者单位： | 北京师范大学, 化学系, 北京, 100875 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 本文对近10年来有关ArF激光(193nm)光致抗蚀剂的研究开发情况进行了调研,对193nm光致抗蚀剂组成物的各个组分进行了归纳综述.从本文可以看出,利用193nm成像技术可以刻画线幅很细(<0.13μm)的图像,能适应信息技术的发展对于光致抗蚀剂高分辨率的要求.但若想将193nm成像技术在实践中推广应用,还有诸多问题需待研究解决.
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| 关 键 词： | ArF激光 光致抗蚀剂 化学增幅 矩阵树脂 光产酸源 |
| 收稿时间： | 2002-09-01 |
THE PROGRESS OF ArF EXCIMER LASER PHOTORESIST |
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| YU Shang-xian,YANG Ling-lu,ZHANG Gai-lian. THE PROGRESS OF ArF EXCIMER LASER PHOTORESIST[J]. Imaging Science and Photochemistry, 2003, 21(1): 61-71. DOI: 10.7517/j.issn.1674-0475.2003.01.61 |
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| Authors: | YU Shang-xian YANG Ling-lu ZHANG Gai-lian |
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| Affiliation: | Chemistry Department, Beijing Normal University, Beijing 100875, P.R. China |
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| Abstract: | This article presented the progress of ArF excimer laser (193 nm) photoresist in last ten years.The different components of 193 nm photoresist were summarized in detail.It indicates that the fine pattern can be obtained by 193 nm lithography technology.ArF excimer laser is a leading candidate for the fabrication of fine pattern.But there are still some problems need to be resolved in the practice. |
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| Keywords: | ArF excimer laser photoresist chemically amplification matrix polymer photoacid generator |
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