InGaN green light emitting diodes with deposited nanoparticles |
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| Authors: | Bayram Butun Jean Cesario Stefan Enoch Romain Quidant Ekmel Ozbay |
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| Institution: | 1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan;2. Department of Computer and Communication, Kun Shan University, Tainan 71003, Taiwan;3. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan;4. Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan |
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| Abstract: | We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement. |
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| Keywords: | GaN InGaN MOCVD Light-emitting diode (LED) Nanoparticle Surface plasmon Silver Fourier modal method Plasmon |
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