Characterization of ion implanted n+ layers on tetrahedrically textured silicon surfaces

Ion implantation of 2 × 10^{15 31}P⁺/cm² at 10 keV and furnace annealing at 750° C, 1/2 h, have been used to obtain n⁺ -p junctions on (100) silicon samples having tetrahedrically textured surfaces. This texture was obtained by an anisotropic etching in a hot hydra-zine-water mixture. Morphological properties of the surface (dimension, homogeneity and characteristic of the tetrahedrons) have been analyzed and electrical properties of the implanted layers (sheet resistivity, carrier concentration profile) have been measured. The electrical characteristics of the textured samples are similar to those obtained using samples with flat polished surface; the tetrahe-dral structures are not damaged by the implantation process and they keep their antireflecting properties unaltered.