The radiation damage in high-dose argon-implanted silicon |
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| Authors: | M. Kisielewicz J. Ciemniewski A. Wasiak K. Paprocki K. Kiszczak C. Wagner |
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| Affiliation: | 1. Institute of Physics, M. Curie-Sk?odowska University , Lublin , 20-031 , POLAND;2. Sektion Physik, Humboldt-Universit?t Berlin , G.D.R. |
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| Abstract: | Measurements of the depth profiles of disorder produced in silicon by argon ions implanted at energies of 20-300 keV and with a fluence of 1016 to 1017/cm2 were made by profiling the oxide growth rate. |
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