The influence of fast neutron irradiation on the IR optical properties of NTD-Silicon |
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| Authors: | Jakub Totarkiewicz Ryszard J. Iwanowski Stanislawa Strzelecka |
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| Affiliation: | 1. Institute of Physics, Polish Academy of Sciences , al. Lotników 32/46, 02-668, Warszawa, POLAND;2. Institute of Electronic Materials Technology , ul. Konstruktorska 6, 02-673, Warszawa, POLAND |
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| Abstract: | Optical IR measurements of NTD-Si are presented for different fast neutron doses. The exponential dependence of the divacancy concentration and the near-edge absorption as a function of fast neutron flux is reported. Silicon one-phonon absorption, caused by the irradiation, is also increasing with the rising percentage of fast neutrons in the flux |
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